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| 2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt -di/dt PD Tch Tstg VISO Ratings 600 600 11 44 30 11 439.1 7 20 5 100 70 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ kV/s kV/s A/s W Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note *1 Note *2 Note *3 VDS< 600V = Note *4 Note *5 Tc=25C Ta=25C Gate(G) Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=5A,L=32.2mH, VCC=60V,RG=50 EAS limited by maximum channel temperature and avalanch current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Theemal impedance' graph C C kVrms t=60sec, f=60Hz Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=5.5A VGS=10V ID=5.5A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=5.5A VGS=10V RGS=10 VCC=300V ID=11A VGS=10V IF=11A VGS=0V Tch=25C IF=11A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient < < < Note *4:IF = -ID, -di/dt=100A/s,VCC= BVDSS,Tch= 150C < < < Note *5:IF= -ID, dv/dt=5kV/s,VCC BVDSS,Tch= 150C = Min. 600 3.0 Tch=25C Tch=125C Typ. Max. 5.0 25 2.0 100 0.80 Units V V A mA nA S pF 5 0.62 10 1100 1650 150 225 8 12 17 26 7 11 40 60 8 12 30 45 9 13.5 10 15 1.00 1.50 120 250 0.6 1.5 ns nC V ns C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 1.786 58 Units C/W C/W 1 2SK3929-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 80 24 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 7.5V 70 20 60 16 50 7V PD [W] ID [A] 40 12 30 8 20 4 10 VGS=6V 6.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0.1 0.01 0.1 0.01 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 VGS[V] ID [A] 1.7 1.6 1.5 1.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6.5V 7.0V 2.2 2.0 1.8 1.6 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V RDS(on) [ ] 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 7.5V 8V 10V 20V RDS(on) [ ] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. ID [A] Tch [C] 2 2SK3929-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA FUJI POWER MOSFET 7 24 Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25C 6 20 Vcc= 120V 5 max. 16 300V 480V VGS(th) [V] VGS [V] 4 12 3 min. 8 2 1 4 0 -50 -25 0 25 50 75 100 125 150 0 0 10 20 30 40 50 60 70 80 Tch [C] Qg [nC] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 1n Ciss 10 C [F] 100p Coss IF [A] 1 3 10p Crss 1p -1 10 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 500 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=11A tf 400 IAS=5A 10 2 td(off) 300 I =7A AS td(on) EAV [mJ] t [ns] 200 IAS=11A 10 1 tr 100 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3929-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -8 10 -1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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